| PART |
Description |
Maker |
| IRFM214B IRFM214BTFFP001 |
250V N-Channel B-FET / Substitute of IRFM214A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SFW9614TM |
250V P-Channel A-FET
|
Fairchild Semiconductor
|
| SFW9624 SFW9624TM |
Advanced Power MOSFET
250V P-Channel A-FET
|
Fairchild Semiconductor
|
| SFR9214 SFU9214 SFRU9214 SFU9214TU |
250V P-Channel A-FET
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI6N25 FQB6N25 FQB6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET 5.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQD6P25 FQU6P25 FQD6P25TF FQD6P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF634 IRF634FP |
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
|
TE Connectivity, Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRHG8214 2071 IRHG3214 IRHG4214 IRHG7214 IRHG8214N |
250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
0.5 A, 250 V, 2.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
250V Quad N-Channel MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE
From old datasheet system
|
IRF[International Rectifier]
http://
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
